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Interdiffusion of Cr/Pt/Ag metallisation layers on silicon impatt diodes

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5 Author(s)
Morgan, D.V. ; University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK ; Howes, M.J. ; Mukherjee, S.D. ; Taylor, D.J.
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Thermal interdiffusion in the Cr/Pt/Ag metallisation system used for silicon impatt diodes has been characterised using Rutherford backscattering of helium ions. Considerable interdiffusion, characterised by an activation energy of 0·5 eV, is observed in the Pt/Ag thin-film boundary, the Cr/Pt interface is found to be stable up to 400°C with practically no observable diffusion.

Published in:
Solid-State and Electron Devices, IEE Journal on  (Volume:1 ,  Issue: 5 )

Date of Publication: September 1977

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