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High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

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5 Author(s)
Ito, H. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Yamahata, S. ; Shigekawa, N. ; Kurishima, K.
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State of the art fT and fmax values of 135 and 113 GHz for MOCVD grown C-doped base InP/InGaAs HBTs are achieved with a 0.5×4.7 μm2 emitter area device. A rapid increase in fT at a very low VCE value of 0.3 V owing to the abrupt base dopant profile demonstrates the suitability of C-doped-base HBTs for high-speed and low-power circuit applications

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Electronics Letters  (Volume:31 ,  Issue: 24 )