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Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods

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1 Author(s)
Robert A. Warriner ; University of Reading, Department of Computer Science, Reading, UK

A gallium arsenide planar field-effect transistor (f.e.t.) structure is simulated using a particle-mesh computer model. The model incorporates two dimensions in configuration space and three dimensions in k-space; with a full description of the material scattering cross-section which is implemented using Monte-Carlo techniques. The f.e.t. static characteristic has been calculated together with the lumped equivalent-circuit paramters. A comparison is made between devices with and without substrate. Detailed information about electrostatic potential and valley population profiles is presented for the first time. Cole-Cole plots of complex output impedance are used in determining device frequency response.

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Solid-State and Electron Devices, IEE Journal on  (Volume:1 ,  Issue: 4 )