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Detection of parasitic potential wells or barriers in bulk-transport charge-coupled devices

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2 Author(s)
Kleefstra, M. ; Delft University of Technology, Electrical Engineering Department, Delft, Netherlands ; Heuwekemeijer, P.C.

For bulk c.c.d.s, the depth of the potential well is obtained by measuring the differential conductance perpendicular to the c.c.d. transfer direction. A test field-effect device, the measuring method and the circuitry are presented. An example shows the ability of the method to detect parasitic potential wells in the transfer direction.

Published in:

Solid-State and Electron Devices, IEE Journal on  (Volume:1 ,  Issue: 2 )