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High-performance metal-semiconductor-metal photodetector with a thin hydrogenated amorphous silicon layer on crystalline silicon

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6 Author(s)
Li-Hong Laih ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Wen-Chin Tsay ; Yen-Ann Chen ; Tean Sen Jen
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A thin intrinsic hydrogenated amorphous silicon (i-a-Si:H) layer was used to improve the performance of Si metal-semiconductor-metal photodetectors (MSM-PDs). At a bias of 10 V, this a-Si:H MSM-PD had a rise time of 25 ps and an FWHM of 55 ps for temporal response, a dark current density of 690 fA/μm2, a responsivity of 0.7 A/W and a spectral response peaking at 700 nm

Published in:

Electronics Letters  (Volume:31 ,  Issue: 24 )

Date of Publication:

23 Nov 1995

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