Technology Characteristics and Concerns Arising in the Design and Fabrication of an Entire Signal Processor using Gallium Arsenide Integrated Circuits

The Defense Advanced Research Projects Agency has, since 1980, committed considerable resources to the development of the technology base and the necessary fabrication facilities to convert digital Gallium Arsenide (Gaas) integrated circuits from a laboratory curiousity to the level of feasible demonstration in signal processors of interest to the U.S. Defense Department. This paper discusses the various GaAs transistor and gate technologies which have evolved since 1980, the strengths and deficiencies of each, and the probable uses of both the first and second generations of digital GaAs in a complex target signal processor, the AOSP. The paper also discusses the testing of GaAs components at the wafer probe, packaged part, and assembled circuit board levels, since the device speeds exceed the chip test capabilities of commercially available testers.