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We report the integration of a novel selenium segregation (SeS) technology in the silicide contact of strained n-MOSFETs featuring silicon-carbon Si0.99C0.01 source/drain (S/D) stressors. SeS at the NiSi:C/n-Si0.99 C0.01 interface leads to the achievement of low Schottky barrier height and reduced silicide contact resistance R CSD. At a fixed I OFF of 100 nA/ mum, the improved silicide contact technology employing SeS contributed to a 20% drive current I ON enhancement and 30% total series resistance R Total reduction over control strained devices. The R Total improvement is primarily due to the reduction of external series resistance R EXT, which is due to a reduced R CSD at the NiSi:C/n- Si0.99C0.01 interface. Comparable DIBL, V Tsat and gate leakage density were observed for strained n-MOSFETs with or without the SeS. The impact of introducing Se in the embedded Si0.99C0.01 S/D stressor on tensile stress level in the channel region of strained n-MOSFET was also investigated.