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Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD Simulations

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7 Author(s)
Zhao, H. ; Agency for Sci., Technol. & Res., Inst. of Microelectron., Singapore ; Rustagi, S.C. ; Fa-Jun Ma ; Samudra, G.S.
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In this brief, we carried out extensive mixed device and circuit-mode simulations to calibrate the charge-based capacitance measurement technique specifically for subfemtofarad nanowire-based device capacitance. The factors that influence the accuracy of the technique were identified.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 5 )