Referenced Items are not available for this document.
We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.
Published in:
Electron Devices, IEEE Transactions on
(Volume:56
,
Issue:
5
)
Date of Publication: May 2009
- Page(s):
- 998 - 1006
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 10587585
- Digital Object Identifier :
- 10.1109/TED.2009.2015822
- Product Type:
- Journals & Magazines
- Date of Publication :
- 24 March 2009
- Date of Current Version :
- 21 April 2009
- Issue Date :
- May 2009
- Sponsored by :
- IEEE Electron Devices Society
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