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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:56 Issue:5 Help

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

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4 Author(s)
Ielmini, D. ; Dipt. di Elettron. e Inf., Politec. di Milano, Milan ; Sharma, D. ; Lavizzari, S. ; Lacaita, A.L.

The phase-change memory (PCM) relies on the electrical properties of the chalcogenide materials to represent the stored bit of information. As a result, data stability depends on structural relaxation (SR) in the amorphous chalcogenide phase, which results in a temperature-accelerated time evolution of the electrical properties of the active material. Here, we address the time, temperature, and bias dependence of SR effects on the amorphous Ge2Sb2Te5 (GST) material used in PCM cells. Electrical measurements for increasing annealing time and temperature indicate that SR can be described by a defect annihilation process in the amorphous chalcogenide material. Finally, the stability of chalcogenide resistance as a function of the read conditions is discussed, for the purpose of reducing the impact of SR on the reliability of PCM devices.

Published in:
Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 5 )

Date of Publication: May 2009

Page(s):
1070 - 1077
ISSN :
0018-9383
INSPEC Accession Number:
10587571
Digital Object Identifier :
10.1109/TED.2009.2016397
Product Type:
Journals & Magazines
Date of Publication :
24 March 2009
Date of Current Version :
21 April 2009
Issue Date :
May 2009
Sponsored by :
IEEE Electron Devices Society

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