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A K-Band High-Gain Down-Conversion Mixer in 0.18 \mu m CMOS Technology

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3 Author(s)
Dukju Ahn ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon ; Dong-Wook Kim ; Songcheol Hong

A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:19 ,  Issue: 4 )