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Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor

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6 Author(s)
SeungHun Son ; Memory Div., Samsung Electron. Co., Suwon, South Korea ; Hwang, Sungwoo ; Ahn, Doyeol ; JungIll Lee
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We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E 1) and the first excited state (E 2) of the Fock-Darwin states.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 1 )

Date of Publication:

Jan. 2010

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