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A large batch PECVD system has been developed in order to deposit a-Si/a-SiGe and a-Si/muc-Si solar cell on 20 pieces of SnO2-coated glass with the area of 0.8 m2. Newly designed electrode has been used in order to achieve uniform muc-Si film on 0.8 m2. Beside muc-Si nlayer, p(muc-SiO) has been used in the p-layer of the bottom cell in order to increase the module performance. Alcohol flush has been used in order to minimize the boron contamination. Furthermore, ZnO/Ag back electrode has been used instead of ZnO/Al electrode. Up to now, initial module efficiency of more than 6.5% and 7% have been achieved with a-SiO/a-Si/a-SiGe and a-Si/muc-Si cell structure.