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Double boundary trench isolation effects on a stacked gradient homojunction photodiode array

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2 Author(s)
Jansz, P.V. ; Phys. Res. Group, Edith Cowan Univ., Perth, WA ; Hinckley, S.

The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Date of Conference:

July 28 2008-Aug. 1 2008