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The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

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5 Author(s)
Logan, D.F. ; Dept. of Eng. Phys., McMaster Univ., Hamilton, ON ; Jessop, P.E. ; Knights, A.P. ; Gwilliam, R.M.
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The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm-1, while the intrinsic loss of the waveguides is limited to 2 dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Date of Conference:

July 28 2008-Aug. 1 2008