Referenced Items are not available for this document.
The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm-1, while the intrinsic loss of the waveguides is limited to 2 dBcm-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Date of Conference: July 28 2008-Aug. 1 2008
- Page(s):
- 152 - 155
- ISSN :
- 1097-2137
- E-ISBN :
- 978-1-4244-2717-8
- Print ISBN:
- 978-1-4244-2716-1
- INSPEC Accession Number:
- 10545810
- Conference Location :
- Sydney, SA
- Digital Object Identifier :
- 10.1109/COMMAD.2008.4802114
- Product Type:
- Conference Publications
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