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36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD

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4 Author(s)
Dongwoo Suh ; Electron. & Telecommun. Res. Inst., Daejeon ; Sanghoon Kim ; Jiho Joo ; Gyungock Kim

We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the high-resolution X-ray diffraction analysis, the Ge epilayer shows good crystalline homogeneity and the residual tensile strain of 0.16%. The fabricated device exhibits the 3-dB bandwidth of 36 GHz, the responsivity of 0.47 A/W, and low dark current of 42 nA at lambda ~ 1.55 mum. The same device also shows the responsivity of 0.7 A/W at lambda ~ 1.31mum. The on-chip measurement of the eye diagram shows a good opening at 40-Gb/s data transmission.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 10 )

Date of Publication:

May15, 2009

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