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Read Disturb in NROM Charge Trapping Non-Volatile Memory Device

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4 Author(s)
Shainsky, N. ; Electr. Eng., Tel Aviv Univ., Ramat Aviv ; Bloom, I. ; Shacham, Y. ; Eitan, B.

We investigated threshold voltage (VT) shifts during read operation of NROM devices in advanced non-volatile memory (NVM) process generations (75nm). For the first time it is demonstrated that channel-initiated secondary electron injection (CHISEL) mechanism is the main source of the "read disturb" experimental results in advanced process devices. This mechanism is generic to non-volatile memories (NVM) devices and must be minimized to avoid data corruption during read.

Published in:

Device Research Conference, 2008

Date of Conference:

23-25 June 2008

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