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Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping

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5 Author(s)
A. Teranishi ; Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro-Ku, Tokyo 152-8552, Japan ; S. Suzuki ; H. Sugiyama ; H. Yokoyama
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We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 1018cm-3. By these characteristics, oscillators with the fundamental oscillation exceeding 1 THz are sufficiently possible.

Published in:

Device Research Conference, 2008

Date of Conference:

23-25 June 2008