Referenced Items are not available for this document.
We have successfully demonstrated top-gate a-Si TFT with self-aligned nickel silicide source/drsain (S/D). We have shown, by examining contact resistance, the dominant electron injection mechanism is tunneling from silicide S/D to the channel. Further, we show that the contact resistance has no influence on device threshold and little effect on effective mobility down to L=5 mum.
Published in:
Device Research Conference, 2008
Date of Conference: 23-25 June 2008
- Page(s):
- 241 - 242
- ISSN :
- 1548-3770
- E-ISBN :
- 978-1-4244-1943-2
- Print ISBN:
- 978-1-4244-1942-5
- INSPEC Accession Number:
- 10519739
- Conference Location :
- Santa Barbara, CA
- Digital Object Identifier :
- 10.1109/DRC.2008.4800821
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