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Top-gated Thin Film FETs Fabricated from Arrays of Self-aligned Semiconducting Carbon Nanotubes

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7 Author(s)
Michael Engel ; IBM Research Division, IBM Thomas J. Watson Research Center Yorktown Heights, NY, 10598, USA, Email: engelm@us.ibm.com Phone: (914) 945-2432 Fax: (914) 945-4531 ; Joshua P. Small ; Mathias Steiner ; Yu-Ming Lin
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In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanotubes from the liquid phase, we have fabricated aligned, thin-film CNT devices with high on-state currents. The fabrication scheme presented here provides a versatile production method translatable to other substrates such as flexible plastics.

Published in:

Device Research Conference, 2008

Date of Conference:

23-25 June 2008