Skip to Main Content
In this work, we report for the first time the detailed temperature dependent microwave noise characteristics of AlGaN/GaN HEMTs on Si substrate from -50degC to 175degC (223 K to 448 K). The AlGaN/GaN HEMT layer structures and fabrication details were published. The fabricated HEMTs have also gone through post gate annealing at 400degC for 5 minutes. However, it is interesting to note that at high temperature the degree of noise degradation of AlGaN/GaN HEMT on Si substrate is lower than that on sapphire substrate and close to that on SiC substrate.
Device Research Conference, 2008
Date of Conference: 23-25 June 2008