Referenced Items are not available for this document.
In this work, we report for the first time the detailed temperature dependent microwave noise characteristics of AlGaN/GaN HEMTs on Si substrate from -50degC to 175degC (223 K to 448 K). The AlGaN/GaN HEMT layer structures and fabrication details were published. The fabricated HEMTs have also gone through post gate annealing at 400degC for 5 minutes. However, it is interesting to note that at high temperature the degree of noise degradation of AlGaN/GaN HEMT on Si substrate is lower than that on sapphire substrate and close to that on SiC substrate.
Published in:
Device Research Conference, 2008
Date of Conference: 23-25 June 2008
- Page(s):
- 127 - 128
- ISSN :
- 1548-3770
- E-ISBN :
- 978-1-4244-1943-2
- Print ISBN:
- 978-1-4244-1942-5
- INSPEC Accession Number:
- 10519694
- Conference Location :
- Santa Barbara, CA
- Digital Object Identifier :
- 10.1109/DRC.2008.4800767
- Product Type:
- Conference Publications
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