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Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress

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5 Author(s)
Lim, P. ; Center for Integrated Syst., Stanford Univ., Stanford, CA ; Xinran Wang ; Dai, Hongjie ; Nishi, Yoshio
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We have shown that CNT-FETs suffer under hot carrier stress on a similar level to those of conventional silicon FETs, despite its advantage in transport properties. More studies on CNT- FET operating reliability must therefore be conducted before it can be used for practical applications.

Published in:

Device Research Conference, 2008

Date of Conference:

23-25 June 2008