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Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

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4 Author(s)
Sandow, C. ; IBN-1, Forschungszentrum Julich GmbH, Julich ; Knoch, J. ; Urban, C. ; Mantl, S.

For the first time, we investigated the impact of varying doping concentration and gate oxide thickness on the performance of band-to-band tunneling transistors. The output saturation current revealed a strong dependence on both parameters. Consequently, we were able to improve the saturation current by nearly a factor of 50.

Published in:

Device Research Conference, 2008

Date of Conference:

23-25 June 2008

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