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High Electron Mobility (2270 cm2/Vsec) In0.53Ga0.47As Inversion Channel N-MOSFETs with ALD ZrO2 Gate Oxide Providing 1 nm EOT

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13 Author(s)
S. Koveshnikov ; Intel Corporation, Santa Clara, CA 95052, University at Albany - SUNY, NY 12203, phone: 503-901-3010, e-mail: sergei.v.koveshnikov@intel. com ; N. Goel ; P. Majhi ; C. K. Gaspe
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Self-aligned MOSFETs with high-Indium content InGaAs based channel, ultra-thin high-k dielectric and metal gate are attractive devices for logic applications. To be compatible with the future generation CMOS technology, these devices must demonstrate high channel mobility and excellent performance at low operating voltage. Development of a thermally stable I-V/high-k interface with low EOT and low interface state density remains the key challenge for compound semiconductor implementation.

Published in:

Device Research Conference, 2008

Date of Conference:

23-25 June 2008