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N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks

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7 Author(s)
Orpella, A. ; Grupo de Micro y Nanotecnologias MNT, Univ. Politec. de Catalunya, Barcelona ; Blanque, S. ; Roiati, V. ; Martin, I.
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This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this technique, emitter saturation current density can be decreased to values around 250 fA middot cm-2. As a consequence, open circuit voltages can be increased 25 mV achieving values around 640 mV.

Published in:

Electron Devices, 2009. CDE 2009. Spanish Conference on

Date of Conference:

11-13 Feb. 2009

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