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Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

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9 Author(s)
I. Cortes ; 1CNRS; LAAS; 7 Avenue du Colonel Roche, F-31077 Toulouse, France; Université de Toulouse; UPS, INSA, INP, ISAE; LAAS; F-31077 Toulouse, France ; E. Al-Alam ; MP Besland ; P. Regreny
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In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300degC) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.

Published in:

2009 Spanish Conference on Electron Devices

Date of Conference:

11-13 Feb. 2009