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An ultra-low power wideband CMOS low noise amplifier (LNA) fabricated in TSMC 0.18 mum RF CMOS process for sub 1 GHz applications is presented. The capacitive cross-coupled LNA with forward-body-bias (FBB) technique is adopted to achieve wideband input impedance matching and low power, low noise factor. The LNA is tested in the frequency range of 400-900 MHz, and exhibits a voltage gain of 18.5-20.7 dB, and a noise figure of 2.95 dB, drawing only 0.385 mW from 0.5 V power supply.
Published in:
Electronics Letters
(Volume:45
,
Issue:
6
)
Date of Publication: March 12 2009
- Page(s):
- 289 - 290
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 10541961
- Digital Object Identifier :
- 10.1049/el.2009.3150
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 16 March 2009
- Issue Date :
- March 12 2009
- Sponsored by :
- Institution of Engineering and Technology
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