By Topic

Analysis of Resistive-Open Defects in SRAM Sense Amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ney, A. ; Lab. dTnformatique de Robot. et de Microelectron. de Montpellier, Univ. de Montpellier II, Montpellier, France ; Girard, P. ; Pravossoudovitch, S. ; Virazel, A.
more authors

In this paper, we present an exhaustive analysis of resistive- open defects in sense amplifiers of static random access memory designed with a 65 nm technology. We show that some resistive-open defects may lead to a new type of dynamic behavior that has never been experienced in the past. It is modeled by dynamic two-cell incorrect read faults of two different types. Such fault models represent failures in the sense amplifier, which prevent it from performing any read operations (in case of type 1 [1]) or only a single type of read operation (in case of type 2). Results of electrical simulations are presented to provide a complete understanding of such a faulty behavior and possible March test solutions are proposed to detect all d2cIRFs.

Published in:

Very Large Scale Integration (VLSI) Systems, IEEE Transactions on  (Volume:17 ,  Issue: 10 )