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This paper presents an efficient carbon nanotube (CNT) transistor modeling technique that is based on cubic spline approximation of the nonequilibrium mobile charge density. The approximation facilitates the solution of the self-consistent voltage equation in a CNT so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and nonballistic transport theories and experimental results.