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Forward current density (JF)-forward voltage (VF) characteristics are experimentally and computationally investigated for 4H-silicon carbide junction barrier Schottky (JBS) diodes with a lightly doped (3 - 5 times1015 cm-3) drift layer and 2-mum-wide p+ stripe regions separated by 1 mum. The JF-VF characteristics of fabricated JBS diodes are compared with those of Schottky barrier diodes simultaneously fabricated on the same epitaxial wafers. These JF-VF characteristics are also compared with those of simulated JBS diodes, assuming boxlike and Monte Carlo-simulated profiles of aluminum. In the simulation of aluminum ion implantation, concentration contours of created interstitials and vacancies are calculated, and their influence on the JF-VF characteristics of JBS diodes is discussed in terms of degradation of electron mobility in the surface region of the drift layer.