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Electron transport in Gate-All-Around uniaxial tensile strained-Si nanowire n-MOSFETs

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4 Author(s)
Pouya Hashemi ; MIT Microsystems Technology Laboratories, Cambridge, MA 02139, USA ; Leonardo Gomez ; Michael Canonico ; Judy L. Hoyt

The intrinsic performance and electron effective mobility of uniaxially strained-Si gate-all-around (GAA) NanoWire (NW) n-MOSFETs are investigated, for the first time. Suspended strained-Si NWs show very high stress (up to ~2.1 GPA) as confirmed by Raman, with no bending of the wires. GAA strained-Si NW n-MOSFETs exhibit excellent subthreshold swing, and current drive and transconductance enhancement of ~2X over unstrained Si control NW devices. The mobility enhancement of these devices over unstrained planar and GAA MOSFETs as well as their scalability to circular NWs with radius of ~4 nm are also demonstrated.

Published in:

2008 IEEE International Electron Devices Meeting

Date of Conference:

15-17 Dec. 2008