Referenced Items are not available for this document.
SRAM cells with Vth-controllable independent double-gate (IDG) FinFETs have been successfully fabricated. The performance of the fabricated SRAM cell with various circuit topologies has been investigated comprehensively. Both a reduction of leakage current and an enhancement of read and write noise margins have been successfully demonstrated by introducing the IDG FinFETs into the SRAM cells.
Published in:
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Date of Conference: 15-17 Dec. 2008
- Page(s):
- 1 - 4
- ISSN :
- 8164-2284
- E-ISBN :
- 978-1-4244-2378-1
- Print ISBN:
- 978-1-4244-2377-4
- INSPEC Accession Number:
- 10500651
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/IEDM.2008.4796833
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
