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Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

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10 Author(s)
Komori, Y. ; Center for Semicond. R&D, Toshiba Corp., Yokohama ; Kido, M. ; Kito, M. ; Katsumata, R.
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Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.

Published in:

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Date of Conference:

15-17 Dec. 2008

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