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A comprehensive study of low-k/Cu integration featuring short TAT (turnaround time) silylated scalable porous silica (Po-SiO, k=2.1) with high porosity (50%) is presented. The TAT for silylation is about 25% reduced by adding a promoter, causing reinforcement of the film. Applying this improved Po-SiO, 140 nm pitch dual damascene structure is successfully achieved. The wiring capacitance showed 10% reduction compared with the conventional porous SiOC (ULK, k=2.65). Sufficient interconnect reliability and packaging characteristics for circuit-under-pad structure are also obtained. The predicted circuit-performance was 8% higher than ULK in 32 nm node.