Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

N-type InGaAs MOS devices are fabricated using HfO
₂
/TaN and HfAlO/TaN gate stacks. Both direct deposition and novel in-situ plasma PH
₃
surface passivation are compared. The PH
₃
-passivated MOS capacitances shows high performance with EOT=1.7
_~
3.0 nm, J
_g
=2times10
^-5
A/cm
²
at V
_g
=2 V. After RTA, gate stack maintains stable with excellent C-V frequency dispersion of 1.3%. Silicon implanted InGaAs achieves good n
⁺
-p rectifying characteristic and low resistivity in the n
⁺
S/D by 600degC RTA. Inversion-mode nMOSFET exhibits remarkable enhancement with the PH
₃
-passivation. It shows an excellent S.S.=96 mV/dec and mu
_eff
=1600 cm
²
/Vs. There is significant reduction in S.S. and leap in drain current comparing to the recent reported inversion-mode III-V MOSFET and unpassivated control samples. In addition, sub 100 nm InGaAs MOSFET with the self-aligned gate-first process is demonstrated for the first time.