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(110) NMOSFETs competitive to (001) NMOSFETs: Si migration to create (331) facet and ultra-shallow Al implantation after NiSi formation

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11 Author(s)
Fukutome, H. ; Fujitsu Labs. Ltd., Akiruno ; Okabe, K. ; Okubo, K. ; Minakata, H.
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We demonstrated for the first time the device performance of (110) nMOSFETs featuring a Si migration process, resulting in better mobility and modified shape of the narrow active region, and ultra-shallow Al implantation after nickel silicide (NiSi) formation, resulting in reduced parasitic resistance. We found that these processes made the performance of (110) nMOSFETs competitive with that of (001) nMOSFETs while maintaining their 40% advantage in pMOSFET performance.

Published in:

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Date of Conference:

15-17 Dec. 2008