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Mid-infrared GaSb-based EP-VCSELl emitting at 2.63 μm

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5 Author(s)
Ducanchez, A. ; Inst. d'Electron. du Sud, Univ. Montpellier 2, Montpellier ; Cerutti, L. ; Grech, P. ; Genty, F.
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Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 m at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 s, 5 ) operation was obtained at room temperature for 35 m-diameter devices with threshold current of 85 mA.

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Electronics Letters  (Volume:45 ,  Issue: 5 )