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High-Density Through Silicon Vias for 3-D LSIs

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3 Author(s)
Koyanagi, M. ; Dept. of Bioeng. & Robot., Tohoku Univ., Sendai ; Fukushima, T. ; Tanaka, T.

High density through silicon via (TSV) is a key in fabricating three-dimensional (3-D) large-scale integration (LSI). We have developed polycrystalline silicon (poly-Si) TSV technology and tungsten (W)/poly-Si TSV technology for 3-D integration. In the poly-Si TSV formation, low-pressure chemical vapor deposition poly-Si heavily doped with phosphorus was conformally deposited into the narrow and deep trench formed in a Si substrate after the surface of Si trench was thermally oxidized. In the W/poly-Si TSV formation, tungsten was deposited into the Si trench by atomic layer deposition method after the poly-Si deposition, where poly-Si was used as a liner layer for W deposition. The 3-D microprocessor test chip, 3-D memory test chip, 3-D image sensor chip, and 3-D artificial retina chip were successfully fabricated by using poly-Si TSV.

Published in:

Proceedings of the IEEE  (Volume:97 ,  Issue: 1 )