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Through-Silicon Via (TSV)

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1 Author(s)
Makoto Motoyoshi ; Tokyo Inst. of Technol. Yokohama, Yokohama

Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV.

Published in:

Proceedings of the IEEE  (Volume:97 ,  Issue: 1 )