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A Fully Integrated 5 GHz Low-Voltage LNA Using Forward Body Bias Technology

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3 Author(s)
Chieh-Pin Chang ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan ; Ja-Hao Chen ; Yeong-Her Wang

A fully integrated 5 GHz low-voltage and low-power low noise amplifier (LNA) using forward body bias technology, implemented through a 0.18 mum RF CMOS technology, is demonstrated. By employing the current-reused and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S21) of 10.23 dB with a noise figure of 4.1 dB at 5 GHz, while consuming only 0.8 mW dc power with a low supply voltage of 0.6 V. The power consumption figure of merit (FOM1) and the tuning-range figure of merit (FOM2) are optimal at 12.79 dB/mW and 2.6 mW-1, respectively. The chip area is 0.89times0.89 mm2.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:19 ,  Issue: 3 )