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Copper line topology impact of SiOCH low-k dielectric reliability in advanced 45nm technology node and beyond

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5 Author(s)
Vilmay, M. ; STMicroelectronics, 850 rue Jean Monnet 38926 Crolles, France ; Roy, D. ; Monget, C. ; Volpi, F.
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First Page of the Article

Published in:
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International

Date of Conference: 12-16 Oct. 2008

Page(s):
1 - 19
ISSN :
1930-8841
E-ISBN :
978-1-4244-2195-4
Print ISBN:
978-1-4244-2194-7
Conference Location :
South lake Tahoe, CA, USA
Digital Object Identifier :
10.1109/IRWS.2008.4796123
Product Type:
Conference Publications

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