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Variation Tolerance in a Multichannel Carbon-Nanotube Transistor for High-Speed Digital Circuits

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6 Author(s)
Raychowdhury, A. ; Circuits Res. Lab., Intel Corp., Hillsboro, OR ; De, V.K. ; Kurtin, Juanita ; Borkar, S.Y.
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This paper introduces the theory of a carbon-nanotube multichannel transistor and shows that, due to statistical averaging in such a structure, a lot of variations in growth and processing can be tolerated. A model of such a structure has been presented, and Monte Carlo simulations have been performed to identify which of the imperfections and sources of variation are more critical than others. We use this theoretical framework to study short and multichannel carbon-nanotube FET structures for high-performance VLSI.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 3 )