Cart (Loading....) | Create Account
Close category search window

Reliability of Nanoelectromechanical Nonvolatile Memory (NEMory) Cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Young Choi, Woo ; Dept. of Electron. Eng., Sogang Univ., Seoul ; Tsu-Jae King Liu

The reliability of nanoelectromechanical nonvolatile memory cells is investigated. Improvements in beam design, material, and operating ambient condition are shown to be effective for enhancing program/erase endurance. The fabricated cell demonstrated program/erase endurance exceeding 200 dc-voltage sweep cycles and projected retention time more than ten years.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )

Date of Publication:

March 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.