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Reliability of Nanoelectromechanical Nonvolatile Memory (NEMory) Cells

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2 Author(s)
Young Choi, Woo ; Dept. of Electron. Eng., Sogang Univ., Seoul ; Tsu-Jae King Liu

The reliability of nanoelectromechanical nonvolatile memory cells is investigated. Improvements in beam design, material, and operating ambient condition are shown to be effective for enhancing program/erase endurance. The fabricated cell demonstrated program/erase endurance exceeding 200 dc-voltage sweep cycles and projected retention time more than ten years.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )

Date of Publication:

March 2009

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