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High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode

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5 Author(s)
Takahashi, H. ; Corp. R&D Center, Network Technol. Labs., Oki Electr. Ind. Co. Ltd., Tokyo ; Shimamura, T. ; Sugiyama, T. ; Kubota, M.
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A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100 - Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 degC.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 10 )

Date of Publication:

May15, 2009

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