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The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple NH3 plasma treatment instead of complicated processes, such as ion implantation and activation. When the source/drain region of active layer was exposed to NH3 gas plasma, the series resistance of the transistor decreased considerably. It exhibited electrical properties, such as a field-effect mobility of 6 cm2/V middots, a threshold voltage of 0.21 V, and a subthreshold swing of 0.23 V/dec.
Date of Publication: April 2009