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Fluctuation Analysis of Parasitic Resistance in FinFETs With Scaled Fin Thickness

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11 Author(s)
Matsukawa, T. ; Nanoelectron. Res. Inst., AIST, Ibaraki ; Endo, K. ; Ishikawa, Y. ; Yamauchi, H.
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Measurement-based analysis of the parasitic resistance (R para) of FinFETs was extended to investigation of R para fluctuation, which could cause severe on-current variation. R para was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in R para is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. R para variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant R para variation is observed and correlates with the variation of fin thickness.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 4 )