By Topic

Design and process development of silicon nanowire based DNA biosensor using electron beam lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Uda Hashim ; Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Malaysia ; Siti Fatimah Abd. Rahman ; M. Nuzaihan Md. Nor ; Shahrir Salleh

Silicon nanowires (SiNWs) have their unique feature such as similar diameters to biomolecules, chemically tailorable physical properties, enable to apply in biomolecule detection and can be fabricated as a high performance field effect transistor (FET). This research describes the fabrication of silicon nanowire for DNA hybridization detection in biosensor application. The silicon nanowire with line-width of <100 nm is successfully fabricated by electron beam lithography and will follow by deposition of contact metals. Aurum is a suitable metal to make Ohmic contact with SiNWs and its exhibit electrical transport measurements of the devices. The presence of the hybridization DNA will induce electronic charge and changed the electronic properties of the transistor from which detectable electronic signals are generated.

Published in:

Electronic Design, 2008. ICED 2008. International Conference on

Date of Conference:

1-3 Dec. 2008