Referenced Items are not available for this document.
Open Access
The author chronicles the development of the stacked three-dimensional (3D) DRAM cell, highlighting his role in solving the problems of memory data-bandwidth and forecasting a dramatic increase in memory capacity based on his current work using "super-chip" integration technology.
Published in:
Solid-State Circuits Society Newsletter, IEEE
(Volume:13
,
Issue:
1
)
Date of Publication: Winter 2008
- Page(s):
- 37 - 41
- ISSN :
- 1098-4232
- Digital Object Identifier :
- 10.1109/N-SSC.2008.4785690
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 20 February 2009
- Issue Date :
- Winter 2008
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