By Topic

Fabrication and Application of Ruthenium-Doped Titanium Dioxide Films as Electrode Material for Ion-Sensitive Extended-Gate FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jung-Chuan Chou ; Grad. Sch. of Optoelectron., Nat. Yunlin Univ. of Sci. & Technol., Douliou ; Cheng-Wei Chen

A novel ruthenium-doped titanium dioxide (TiO2: Ru) film for pH detection is based on an ion-sensitive extended gate field effect transistor (ISEGFET) sensor. For the preparation of the TiO2:Ru sensing film, a specific processing for metal modification of TiO2 thin film is deposited by a co-sputtering system. After thermal annealing treatment, material analysis of the sensing layer is measured by SEM, Hall measurement system and electrical detection system. The average sensitivity of TiO2:Ru for hydrogen ion detection is about 55.20 mV/pH (concentration range between pH1 and pH13). The effect of long-term drift for TiO2:Ru ISEGFET-based sensor is presented. Drift rate of the sensor for pH is 0.745 mV/h for 12 h. In order to prepare the calcium ion sensor, the sensing membrane of polymer materials is based on TiO2: Ru ISEGFET-based sensor by physical adsorption. The average sensitivity of the calcium ion sensor in the concentration ranging between 1 M and 1times10-3 M CaCl2 is about 29.65 mV/pCa.

Published in:

Sensors Journal, IEEE  (Volume:9 ,  Issue: 3 )