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Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor

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4 Author(s)
Hsing-Hui Hsu ; Dept. of Electron. Eng. & the Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; Horng-Chih Lin ; Leng Chan ; Tiao-Yuan Huang

In this letter, the fluctuation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) with independently controlled double-gate configuration were studied. The defects existing in the NW channels are identified as one of the major sources for the fluctuation. The passivation of these defects by plasma treatment is shown to be effective for reducing the fluctuation. We have also found that the fluctuation is closely related to the operation modes. When only one of the gates is employed as the driving gate to control the switching behavior of the device, an optimum bias for the other gate can be found for minimizing the fluctuation.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 3 )